Electronics

  2010 SEP 8 - (VerticalNews.com) -- According to a study from the United States, "We investigate the temperature- and frequency-dependent electrical behavior of Pt/TiO2/Al2O3/p-Ge metal-oxide-semiconductor (MOS) devices. The conductance in inversion in the measured temperature range from -40 to 100 degrees C is controlled by electron diffusion from the bulk of the substrate to the channel, rather than by generation-recombination at midgap states. ...read more

  2010 SEP 8 - (VerticalNews.com) -- According to a study from the United States, "Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70 degrees C) on either 100 nm HfO2 or SiO2 as the gate dielectrics."

  "Common gate transistors with channel lengths of 40-100 mu m were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO2/CdS-based thin film transistors shows a field effect mobility and threshold voltage of 25 cm(2) V(-1)s(-1) and 2 V, respectively," wrote A.L. Salasvillasenor and colleagues, University of Texas ...read more

  2010 SEP 8 - (VerticalNews.com) -- According to recent research published in the journal Electrochemical and Solid State Letters, "High chemical lateral etching rate at AlN buffer/sacrificial layer embedded into GaN/patterned-sapphire substrate of InGaN-based light emitting diode (LED) was achieved. An air-void structure was observed at a truncated triangular patterned sapphire that provided an empty space to increase the lateral etching rate of the AlN sacrificial layer. ...read more