2008 NOV 17 - (VerticalNews.com) -- According to recent research from Lausanne, Switzerland, "In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time."

  "The slopes for both the rising and the falling edge of the ID (V-GS) device characteristics are less than 10 mV/decade steep which translates into a gain of -80 for the inverter. In addition, the voltage transfer characteristic shows a hysteresis whose width depends on the biasing," wrote K.E. Moselund and colleagues ...read more

  2008 NOV 17 - (VerticalNews.com) -- According to a study from South Korea, "Heat dissipation properties of metal-core printed circuit boards (MCPCBs) having a ceramic dielectric layer are presented for high-power light-emitting diodes (LEDs). The proposed MCPCB is composed of a dense alumina thin film on an aluminum plate, instead of the conventional MCPCB with ceramic polymer composite, which shows low thermal conductivity."

  "Dense alumina thin films, deposited by an aerosol deposition process, showed low leakage current and good dielectric breakdown for high-power applications. Thermal transient measurements of LEDs with the proposed MCPCB were compared to that of LEDs with conventional MCPCB," wrote H.M. Cho and colleagues ...read more

  2008 NOV 17 - (VerticalNews.com) -- According to a study from the United States, "Heterojunction tunneling field-effect transistors (HTFETs) that use strained-silicon/strained-germanium type-H staggered band alignment for hand-to-hand tunneling (BBT) injection are simulated using a nonlocal quantum tunneling model. The tunneling model is first compared to measurements of gate-controlled BBT in previously fabricated strained SiGe diodes and is shown to produce good agreement with the measurements. ...read more