2008 NOV 24 - (VerticalNews.com) -- According to recent research from Russia, "Photophysical properties of new silicon-containing ''nonclassical'' polyconjugated poly[salicylidene azomethine]s were studied and a free carrier photogeneration mechanism characteristic of them was proposed."

  "It was shown that polymer properties are controlled by the structure of the azomethine fragment and acceptor properties of the silicon atom. Due to multiple specific donor-acceptor interactions of unshared electron pairs of azomethine fragments with vacant d orbitals of silicon atoms, polymers feature photosensitive and photoconductive properties," wrote E.L. Alexandrova and colleagues ...read more

  2008 NOV 24 - (VerticalNews.com) -- "In highly degenerate semiconductors, the Lorentz number L and Hall factor A (R) differ significantly from universal constants pi(2)/3 and 1, respectively, due to the pronounced energy dependence of the relaxation time during resonance scattering of carriers. The values of L and A (R) are calculated for various values of the resonant impurity bandwidth, band filling with current carriers, and the relative contribution of resonance scattering," researchers in Russia report ...read more

  2008 NOV 24 - (VerticalNews.com) -- According to recent research from Russia, "Features of the temperature dependence of the concentration of majority free charge carriers in semiconductors on temperature-dependent discharging of bistable centers differing in electrical activity are treated theoretically."

  "Specifically, two-level acceptors, two-level donors, and amphoteric centers are considered. The effects of the level of compensation and the ratio between the binding energies of one and two electrons at a center upon the discharging are studied," wrote A.G. Nikitina and colleagues, Lomonosov Moscow State University ...read more